US 12,289,915 B2
Semiconductor structure
Ronghui Hao, Zhuhai (CN); and King Yuen Wong, Zhuhai (CN)
Assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
Filed by INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
Filed on May 14, 2024, as Appl. No. 18/664,222.
Application 18/664,222 is a division of application No. 17/046,793, granted, now 12,021,124, previously published as PCT/CN2020/102173, filed on Jul. 15, 2020.
Prior Publication US 2024/0304686 A1, Sep. 12, 2024
Int. Cl. H10D 64/23 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01)
CPC H10D 64/256 (2025.01) [H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 62/8503 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor structure (1S), comprising:
a substrate (10);
a first nitride semiconductor layer (12) disposed on the substrate (10);
a second nitride semiconductor layer (13S) disposed on the first nitride semiconductor layer (12) and having a bandgap greater than that of the first nitride semiconductor layer (12), the second nitride semiconductor layer (13S) including a first protrusion (133S) and a second protrusion (134S); and
an electrode (14S) disposed on the second nitride semiconductor layer (13S) and comprising an element;
wherein the electrode (14S) surrounds the first protrusion (133S) and the second protrusion (134S), wherein a diameter of the first protrusion (133S) ranges from approximately 1 nm to approximately 1 μm.