US 12,289,912 B2
Semiconductor element, method of reading out a quantum dot device and system
Pieter Thijs Eendebak, Utrecht (NL); and Nodar Samkharadze, Delft (NL)
Assigned to Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO, 's-Gravenhage (NL)
Appl. No. 17/631,305
Filed by Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO, 's-Gravenhage (NL)
PCT Filed Aug. 7, 2020, PCT No. PCT/NL2020/050501
§ 371(c)(1), (2) Date Jan. 28, 2022,
PCT Pub. No. WO2021/025558, PCT Pub. Date Feb. 11, 2021.
Claims priority of application No. 19190531 (EP), filed on Aug. 7, 2019.
Prior Publication US 2022/0320291 A1, Oct. 6, 2022
Int. Cl. H01L 29/12 (2006.01); H10D 48/00 (2025.01); H10D 62/81 (2025.01)
CPC H10D 62/814 (2025.01) [H10D 48/383 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor element for providing a source reservoir for a charge sensor of a quantum dot device, the semiconductor element comprising:
a semiconductor heterostructure including:
a semiconductor functional layer,
a quantum well layer contiguous to the semiconductor functional layer,
one or more ohmic contacts for providing charge carriers, and
a first accumulation gate electrode that is located at a side of the semiconductor functional layer opposite the quantum well layer and that is spaced apart from the quantum well layer at least by the semiconductor functional layer, the first accumulation gate electrode enabling forming a two-dimensional charge carrier gas in a first area of the quantum well layer upon applying a first biasing voltage to the first accumulation gate electrode; and
a second accumulation gate electrode that is located at a side of the semiconductor functional layer opposite the quantum well layer and that is electrically isolated from the first accumulation gate electrode,
wherein the second accumulation gate electrode is configured to be biased with a second biasing voltage to extend forming the two-dimensional charge carrier gas into a second area of the quantum well layer that is contiguous to the first area.