US 12,289,910 B2
Device for high voltage applications
Kwangsik Ko, Singapore (SG); Qiuyi Xu, Singapore (SG); and Shajan Mathew, Singapore (SG)
Assigned to GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed by GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed on Nov. 9, 2023, as Appl. No. 18/388,214.
Application 18/388,214 is a continuation of application No. 17/548,624, filed on Dec. 13, 2021, granted, now 11,862,673.
Prior Publication US 2024/0072109 A1, Feb. 29, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 62/10 (2025.01); H01L 21/761 (2006.01); H01L 21/765 (2006.01); H10D 8/01 (2025.01); H10D 8/60 (2025.01); H10D 64/00 (2025.01)
CPC H10D 62/107 (2025.01) [H01L 21/761 (2013.01); H01L 21/765 (2013.01); H10D 8/051 (2025.01); H10D 8/60 (2025.01); H10D 64/111 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a buried oxide layer disposed on a substrate;
a first region disposed on the buried oxide layer;
a first ring region disposed in the first region;
a first terminal region disposed in the first ring region;
a second ring region disposed in the first region around the first ring region;
a second terminal region disposed in the second ring region;
wherein the first region has a graded doping concentration, wherein the doping concentration of the first region increases in a radial direction from a center of the first region to a perimeter of the first region;
wherein the first region, the second ring region, and the second terminal region have a first conductivity type; wherein the first ring region and the first terminal region have a second conductivity type; and wherein the first conductivity type is different from the second conductivity type.