US 12,289,909 B2
Thin film transistor, gate driver including the same, and display device including the same
Seung-Jin Kim, Seoul (KR); Jee-Ho Park, Seoul (KR); and Seo-Yeon Im, Paju-si (KR)
Assigned to LG DISPLAY CO., LTD., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Aug. 15, 2023, as Appl. No. 18/234,360.
Application 18/234,360 is a continuation of application No. 17/749,106, filed on May 19, 2022, granted, now 11,764,307.
Application 17/749,106 is a continuation of application No. 17/083,999, filed on Oct. 29, 2020, granted, now 11,355,646, issued on Jun. 7, 2022.
Claims priority of application No. 10-2019-0136978 (KR), filed on Oct. 30, 2019.
Prior Publication US 2023/0395727 A1, Dec. 7, 2023
Int. Cl. G09G 3/32 (2016.01); G09G 3/3225 (2016.01); G09G 3/3266 (2016.01); H10D 30/67 (2025.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01); H01L 21/465 (2006.01); H10K 59/12 (2023.01)
CPC H10D 30/6756 (2025.01) [G09G 3/3225 (2013.01); G09G 3/3266 (2013.01); H10D 30/6757 (2025.01); H10D 62/402 (2025.01); H10D 62/80 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01); G09G 2300/0809 (2013.01); H01L 21/465 (2013.01); H10D 30/6723 (2025.01); H10D 30/673 (2025.01); H10K 59/12 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a thin film transistor comprising:
forming a gate electrode;
forming a semiconductor layer overlapping the gate electrode, the semiconductor layer including a first semiconductor layer of an iron oxide semiconductor and a second semiconductor layer of non-iron oxide semiconductor; and
forming a source electrode and a drain electrode, each being spaced from the semiconductor layer and contacting the semiconductor layer,
wherein a band-gap energy of the second semiconductor layer is greater than a band-gap energy of the first semiconductor layer.