US 12,289,905 B2
Semiconductor structure and associated fabricating method
Jia-Rui Lee, Kaohsiung (TW); Kuo-Ming Wu, Hsinchu (TW); and Yi-Chun Lin, Hsinchu (TW)
Assigned to Parabellum Strategic Opportunities Fund LLC, Austin, TX (US)
Filed by Parabellum Strategic Opportunities Fund LLC, Wilmington, DE (US)
Filed on Jun. 21, 2023, as Appl. No. 18/338,364.
Application 16/661,675 is a division of application No. 15/719,500, filed on Sep. 28, 2017, granted, now 10,505,038, issued on Dec. 10, 2019.
Application 18/338,364 is a continuation of application No. 17/103,611, filed on Nov. 24, 2020, granted, now 11,721,758.
Application 17/103,611 is a continuation of application No. 16/661,675, filed on Oct. 23, 2019, granted, now 10,847,650, issued on Nov. 24, 2020.
Prior Publication US 2023/0335640 A1, Oct. 19, 2023
Int. Cl. H10D 30/65 (2025.01); H01L 21/76 (2006.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01)
CPC H10D 30/658 (2025.01) [H01L 21/76 (2013.01); H01L 21/762 (2013.01); H10D 30/0289 (2025.01); H10D 30/603 (2025.01); H10D 62/116 (2025.01); H10D 64/516 (2025.01); H10D 64/518 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor structure, comprising:
forming an isolation trench in a substrate;
forming a silicon oxide trench fill layer to at least fill the isolation trench in the substrate, the silicon oxide trench fill layer comprising a first portion in the isolation trench;
removing a second portion of the first portion of the silicon oxide trench fill layer in the isolation trench, without exposing a bottom of the isolation trench in the substrate;
forming a first well region in the substrate that includes the isolation trench, the first well region having a first conductivity type and wherein the first portion of the silicon oxide trench fill layer contacts the first well region; and
forming a gate structure over the substrate, wherein the gate structure contacts the first well region of the substrate and fills an empty portion of the isolation trench in the first well region of the substrate created by removing the second portion.