US 12,289,900 B2
HEMT and method of fabricating the same
Chi-Hsiao Chen, Chiayi (TW); Kai-Lin Lee, Kinmen County (TW); and Wei-Jen Chen, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 31, 2021, as Appl. No. 17/335,049.
Claims priority of application No. 202110493062.0 (CN), filed on May 7, 2021.
Prior Publication US 2022/0359740 A1, Nov. 10, 2022
Int. Cl. H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/475 (2025.01) [H10D 30/015 (2025.01); H10D 62/8503 (2025.01)] 5 Claims
OG exemplary drawing
 
1. A high electron mobility transistor (HEMT), comprising:
a substrate;
a channel layer disposed on the substrate;
an active layer disposed on the channel layer, wherein the active layer comprises a P-type aluminum gallium nitride layer;
a P-type gallium nitride gate disposed on the active layer, wherein an interface is between the P-type gallium nitride gate and the P-type aluminum gallium nitride layer, the interface is a surface where the P-type gallium nitride gate physically contacts the P-type aluminum gallium nitride layer, a gradient concentration of P-type dopants within an entirety of the P-type aluminum gallium nitride layer decreases continuously from the interface toward the channel layer, and the gradient concentration of P-type dopants within the P-type aluminum gallium nitride layer has a highest concentration at the interface; and
a source electrode and a drain electrode disposed on the active layer.