US 12,289,899 B2
Nitride-based semiconductor device and method for manufacturing the same
Chao Yang, Suzhou (CN); Chunhua Zhou, Suzhou (CN); Yong Liu, Suzhou (CN); Qiyue Zhao, Suzhou (CN); and Jingyu Shen, Suzhou (CN)
Assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
Appl. No. 17/767,062
Filed by INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
PCT Filed Dec. 17, 2021, PCT No. PCT/CN2021/139017
§ 371(c)(1), (2) Date Apr. 7, 2022,
PCT Pub. No. WO2023/108591, PCT Pub. Date Jun. 22, 2023.
Prior Publication US 2024/0105812 A1, Mar. 28, 2024
Int. Cl. H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/27 (2025.01)
CPC H10D 30/015 (2025.01) [H10D 30/475 (2025.01); H10D 30/477 (2025.01); H10D 62/8503 (2025.01); H10D 64/513 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A nitride-based semiconductor device, comprising:
a first nitride-based semiconductor layer comprising at least two doped barrier regions defining an aperture between the doped barrier regions;
a second nitride-based semiconductor layer disposed over first nitride-based semiconductor layer;
a third nitride-based semiconductor layer disposed on the second nitride-based semiconductor layer and having a bandgap higher than a bandgap of the second nitride-based semiconductor layer;
a passivation layer disposed over the third nitride-based semiconductor layer, wherein a vertical projection of the passivation layer on the first nitride-based semiconductor layer is spaced apart from the aperture;
a gate insulator layer disposed over the third nitride-based semiconductor layer; and
a gate electrode disposed over the gate insulator layer and aligning with the aperture;
wherein the gate electrode and the aperture are vertically separated by the second nitride-based semiconductor layer, the third nitride-based semiconductor layer and the gate insulator layer;
wherein the passivation layer is in physical contact with the third nitride-based semiconductor layer, and the passivation layer and the at least two doped barrier regions are vertically separated by the second nitride-based semiconductor layer and the third nitride-based semiconductor layer;
wherein the aperture has a conductivity higher than a conductivity of the at least two doped barrier regions.