US 12,289,895 B2
Two-terminal memory device
Ui-Yeon Won, Ansan-si (KR); Jong-Seok Lee, Suwon-si (KR); and Sang-Hyeok Yang, Suwon-si (KR)
Assigned to HYUNDAI MOTOR COMPANY, Seoul (KR); and KIA CORPORATION, Seoul (KR)
Filed by HYUNDAI MOTOR COMPANY, Seoul (KR); and KIA CORPORATION, Seoul (KR)
Filed on May 22, 2024, as Appl. No. 18/671,431.
Application 18/671,431 is a division of application No. 17/491,012, filed on Sep. 30, 2021, granted, now 12,022,661.
Claims priority of application No. 10-2021-0097829 (KR), filed on Jul. 26, 2021.
Prior Publication US 2024/0315046 A1, Sep. 19, 2024
Int. Cl. H10D 48/32 (2025.01); H10B 53/30 (2023.01); H10D 1/68 (2025.01); H10D 30/69 (2025.01)
CPC H10B 53/30 (2023.02) [H10D 1/692 (2025.01)] 6 Claims
OG exemplary drawing
 
1. A two-terminal memory device comprising:
a substrate;
an extended drain extending from a drain and a lower surface of the drain, and laminated on the substrate;
a ferroelectric layer connected to the drain, and covering the extended drain and the substrate; and
a source laminated on the ferroelectric layer to face the drain.