US 12,289,889 B2
Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof
Kartik Sondhi, Milpitas, CA (US); Adarsh Rajashekhar, Santa Clara, CA (US); Fei Zhou, San Jose, CA (US); and Raghuveer S. Makala, Campbell, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Jun. 29, 2022, as Appl. No. 17/809,758.
Prior Publication US 2024/0008281 A1, Jan. 4, 2024
Int. Cl. H10B 51/20 (2023.01); H10B 51/30 (2023.01)
CPC H10B 51/20 (2023.02) [H10B 51/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A ferroelectric memory device, comprising:
an alternating stack of insulating layers and electrically conductive layers;
a memory opening extending vertically through the alternating stack and including laterally-protruding portions at levels of the electrically conductive layers; and
a memory opening fill structure located in the memory opening and comprising a vertical semiconductor channel and a vertical stack of discrete ferroelectric memory structures located in the laterally-protruding portions of the memory opening,
wherein each of the ferroelectric memory structures comprises a crystalline ferroelectric material portion and a crystalline template material portion located between a respective electrically conductive layer of the electrically conductive layers and the crystalline ferroelectric material portion.