| CPC H10B 12/315 (2023.02) [H10D 64/251 (2025.01)] | 10 Claims |
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1. A semiconductor device comprising:
a conductive contact plug on a substrate, the conductive contact plug comprising a lower portion and an upper portion on the lower portion, the lower portion having a first width, and the upper portion having a second width less than the first width;
a bit line structure on the conductive contact plug, the bit line structure comprising a conductive structure and an insulation structure provided in a vertical direction perpendicular to an upper surface of the substrate; and
a first lower spacer, a second lower spacer, and a third lower spacer sequentially provided on a sidewall of the lower portion of the conductive contact plug in a horizontal direction parallel to the upper surface of the substrate,
wherein an uppermost surface of the third lower spacer is higher than an upper surface of the first lower spacer and an upper surface of the second lower spacer.
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