	US 12,289,878 B2
	Semiconductor device and method of manufacturing semiconductor device
Tatsuya Onuki, Atsugi (JP); Takanori Matsuzaki, Atsugi (JP); and Shunpei Yamazaki, Setagaya (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/623,299
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed Jun. 30, 2020, PCT No. PCT/IB2020/056149 § 371(c)(1), (2) Date Dec. 28, 2021, PCT Pub. No. WO2021/009589, PCT Pub. Date Jan. 21, 2021.
Claims priority of application No. 2019-129905 (JP), filed on Jul. 12, 2019.
Prior Publication US 2022/0328486 A1, Oct. 13, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01); H01L 21/8258 (2006.01); H01L 27/06 (2006.01)

CPC H10B 12/00 (2023.02) [H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/66969 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01); H10B 12/05 (2023.02); H10B 12/30 (2023.02); H01L 21/8258 (2013.01); H01L 27/0688 (2013.01); H01L 27/1207 (2013.01); H10B 12/033 (2023.02); H10B 12/315 (2023.02)]

8 Claims

1. A semiconductor device comprising:

a first conductor positioned over a substrate;

an oxide positioned in direct contact with a top surface of the first conductor;

a second conductor, a third conductor, and a fourth conductor positioned over the oxide;

a first insulator in which a first opening and a second opening are formed, the first insulator being positioned over the second conductor to the fourth conductor;

a second insulator positioned in the first opening;

a fifth conductor positioned over the second insulator;

a third insulator positioned in the second opening; and

a sixth conductor positioned over the third insulator; insulator,

wherein the third conductor is positioned to overlap with the first conductor,

wherein the first opening is formed to overlap with a region between the second conductor and the third conductor, and

wherein the second opening is formed to overlap with a region between the third conductor and the fourth conductor.