US 12,289,109 B2
Current and/or voltage pulse source with rapid response time and sub-nanosecond jitter
Jean-Pierre Nikolovski, Saint-Paul-lez-Durance (FR); and Driss Aboulkassimi, Saint-Paul-lez-Durance (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed on Dec. 20, 2023, as Appl. No. 18/391,290.
Claims priority of application No. 2214304 (FR), filed on Dec. 22, 2022.
Prior Publication US 2024/0213966 A1, Jun. 27, 2024
Int. Cl. H03K 5/02 (2006.01)
CPC H03K 5/02 (2013.01) 13 Claims
OG exemplary drawing
 
1. An electrical device (DE) for connected ingenerating a test pulse of an electrical parameter chosen from among a current (Iout), a voltage (Vout) and the time derivative of a current (dIout/dt), said electrical device (DE) comprising:
at least one voltage generator (G1) configured for generating an input voltage pulse (Vin) in a first phase (ϕ1);
for each generator (G1), a coil transformer (T1) for amplifying the input voltage pulse (Vin), the coil transformer (T1) having a primary winding (T1a) connected in parallel with the associated generator (G1) and a secondary winding (T1b) having a first end and a second end;
a rectifier diode (D1) having an anode connected to the second end of the secondary winding (T1b) and having a cathode;
a target circuit (RcLcCc) comprising at least one target complex impedance (Zc) and a capacitive element (Cc), the target circuit (RcLcCc) having a first electrode (E1) connected to the cathode of the rectifier diode (D1) and a second electrode (E2);
a trigger circuit (CD) configured for triggering a second phase (2) by discharging said capacitive element (Cc) through the target circuit (RcLcCc) so as to apply the test pulse to the target complex impedance (Zc);
a storage capacitance (C1) mounted between the cathode of the rectifier diode (D1) and the electrical ground (GND) for storing at least some of the electric energy supplied by the secondary winding (T1b), said storage capacitance (C1) being separate from the capacitive element of the target circuit.