US 12,289,087 B2
RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer
Jeffrey B. Shealy, Cornelius, NC (US); Mary Winters, Webster, NY (US); and Craig Moe, Penfield, NY (US)
Assigned to Akoustis, Inc., Huntersville, NC (US)
Filed by Akoustis, Inc., Huntersville, NC (US)
Filed on Jan. 23, 2023, as Appl. No. 18/157,881.
Application 18/157,881 is a division of application No. 16/990,638, filed on Aug. 11, 2020, granted, now 11,581,866.
Application 16/990,638 is a continuation in part of application No. 16/822,689, filed on Mar. 18, 2020, granted, now 11,671,067.
Application 16/822,689 is a continuation of application No. 16/433,849, filed on Jun. 6, 2019, granted, now 11,070,184, issued on Jul. 21, 2021.
Application 16/433,849 is a continuation of application No. 15/784,919, filed on Oct. 16, 2017, granted, now 10,355,659, issued on Jul. 16, 2019.
Application 15/784,919 is a continuation in part of application No. 15/068,510, filed on Mar. 11, 2016, granted, now 10,217,930, issued on Feb. 26, 2019.
Claims priority of provisional application 62/963,915, filed on Jan. 21, 2020.
Prior Publication US 2023/0163743 A1, May 25, 2023
Int. Cl. H03H 9/13 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01); H10N 30/00 (2023.01); H10N 30/02 (2023.01); H10N 30/06 (2023.01); H10N 30/077 (2023.01); H10N 30/086 (2023.01); H10N 30/87 (2023.01); H10N 30/88 (2023.01); H10N 30/072 (2023.01)
CPC H03H 3/02 (2013.01) [H03H 9/02015 (2013.01); H03H 9/02118 (2013.01); H03H 9/0523 (2013.01); H03H 9/105 (2013.01); H03H 9/13 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/177 (2013.01); H03H 9/547 (2013.01); H10N 30/02 (2023.02); H10N 30/06 (2023.02); H10N 30/077 (2023.02); H10N 30/086 (2023.02); H10N 30/706 (2024.05); H10N 30/875 (2023.02); H10N 30/877 (2023.02); H10N 30/88 (2023.02); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01); H10N 30/072 (2023.02); H10N 30/704 (2024.05); Y10T 29/42 (2015.01)] 19 Claims
OG exemplary drawing
 
1. An RF integrated circuit device comprising:
a silicon substrate; and
a ScAlN layer providing a buffer layer for an epi-grown material stack included in an RF High Electron Mobility Transistor (HEMT) device on the silicon substrate and providing a piezoelectric resonator structure included in an RF filter on the silicon substrate,
wherein the HEMT device comprises:
a group III-N channel layer lattice matched to and on the buffer layer;
a group III-N barrier layer on the group III-N channel layer, the group III-N barrier layer having a stress in a range between about −400Mpa and about +400 MPa and to provide a channel region in the group III-N channel layer;
a group III-N drain region recessed into the group III-N channel layer at a first end of the channel region;
a group III-N source region recessed into the group III-N channel layer at a second end of the channel region opposite the first end of the channel region; and
a gate electrode between the group III-N drain region and the group III-N source region.