US 12,289,045 B2
Power conversion device, semiconductor switch drive device, and control method
Fumio Watanabe, Tokyo (JP); and Tetsuya Okamoto, Tokyo (JP)
Assigned to TMEIC CORPORATION, Chuo-ku (JP)
Appl. No. 17/996,532
Filed by TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION, Chuo-ku (JP)
PCT Filed May 12, 2020, PCT No. PCT/JP2020/018943
§ 371(c)(1), (2) Date Oct. 19, 2022,
PCT Pub. No. WO2021/229676, PCT Pub. Date Nov. 18, 2021.
Prior Publication US 2023/0208275 A1, Jun. 29, 2023
Int. Cl. H02M 1/08 (2006.01); H02M 7/539 (2006.01); H03K 17/0812 (2006.01); H02P 27/06 (2006.01)
CPC H02M 1/08 (2013.01) [H02M 7/539 (2013.01); H03K 17/08128 (2013.01); H02P 27/06 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor switch drive device comprising:
a drive circuit configured to supply a control signal to a semiconductor switch of a main circuit and drive the semiconductor switch;
a power supply circuit configured to supply electric power to the drive circuit;
a control circuit configured, by controlling, to switch a conductive state of the semiconductor switch on the basis of a voltage at a control terminal of the semiconductor switch; and
a gate power supply protection circuit including a second switch and configured to detect an overvoltage state and an undervoltage state on a primary side of the power supply circuit, and to cut off, by the second switch, supply of the electric power to the power supply circuit by detecting the overvoltage state, by detecting the undervoltage state, or by the controlling.