US 12,288,927 B2
Semiconductor device with low loss waveguide interface and method therefor
Michael B. Vincent, Chandler, AZ (US); and Giorgio Carluccio, Eindhoven (NL)
Assigned to NXP USA, Inc., Austin, TX (US)
Filed by NXP USA, INC., Austin, TX (US)
Filed on Oct. 25, 2021, as Appl. No. 17/452,091.
Prior Publication US 2023/0127033 A1, Apr. 27, 2023
Int. Cl. H01Q 1/22 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/58 (2006.01)
CPC H01Q 1/2283 (2013.01) [H01L 21/568 (2013.01); H01L 23/585 (2013.01); H01L 23/3128 (2013.01)] 20 Claims
OG exemplary drawing
 
5. A semiconductor device comprising:
a radiating element structure comprising:
a non-conductive substrate;
a radiating element formed at a top side of the non-conductive substrate; and
a conductive ring formed at the top side of the non-conductive substrate, the conductive ring substantially surrounding the radiating element;
a semiconductor die having a bond pad interconnected to the radiating element by way of a conductive trace;
an encapsulant encapsulating at least a portion of the top side of the non-conductive substrate and at least a portion of the radiating element structure, wherein the encapsulant contacts the conductive ring, and a top surface of the conductive ring is exposed through a top surface of the encapsulant; and
a waveguide interface material applied on at least a portion of the top surface of the encapsulant.