| CPC H01M 8/2425 (2013.01) [H01M 8/0228 (2013.01); H01M 8/0247 (2013.01); H01M 8/0254 (2013.01); H01M 8/026 (2013.01); H01M 8/04104 (2013.01); H01M 8/12 (2013.01); H01M 2008/1293 (2013.01); H01M 2300/0071 (2013.01)] | 20 Claims |

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1. Solid Oxide Cell stack, comprising
a plurality of stacked cell units, each unit comprises a solid oxide cell in a cell layer and an interconnect in an interconnect layer,
wherein one interconnect layer separates one cell layer from the adjacent cell layer in the cell stack, each interconnect comprises one or more protruding contact areas on a first side and one or more second protruding contact areas on a second side of the interconnect adapted to provide mechanical and electrical contact between the solid oxide cells,
wherein each solid oxide cell has a high-pressure side facing the first side of an adjacent interconnect and a low-pressure side facing a second side of an adjacent interconnect and
wherein a maximum distance between two adjacent edges of the contact areas on the first side of the interconnects is larger than the maximum distance between two adjacent edges of the contact areas on the second side of the interconnects, and
wherein the maximum distance between the two adjacent edges of the contact areas on the second side of the interconnects does not exceed 2.5 mm.
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