US 12,288,837 B2
Semiconductor light emitting device package
Junghun Lee, Suwon-si (KR); Kyoungjun Kim, Yongin-si (KR); and Seolyoung Choi, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 5, 2022, as Appl. No. 17/569,323.
Claims priority of application No. 10-2021-0041827 (KR), filed on Mar. 31, 2021.
Prior Publication US 2022/0320397 A1, Oct. 6, 2022
Int. Cl. H01L 33/62 (2010.01); H01L 33/56 (2010.01); H01L 33/60 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 33/56 (2013.01); H01L 33/60 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor light emitting device package, comprising:
a ceramic substrate having first and second electrode structures;
a light emitting diode chip mounted on the ceramic substrate, electrically connected to the first and second electrode structures, and configured to emit ultraviolet light;
a sidewall structure disposed on the ceramic substrate, providing a cavity surrounding the light emitting diode chip, and including an alloy having a thermal expansion coefficient in a range of 2 to 10 ppm/° C. and a Young's modulus in a range of 100 to 300 Gpa; and
a glass cover disposed on the sidewall structure to seal the cavity,
wherein an upper portion of the sidewall structure has a stepped structure extending into the cavity.