US 12,288,809 B2
Semiconductor device with doped structure
Miao-Syuan Fan, Hsinchu (TW); Pei-Wei Lee, Hsinchu (TW); Ching-Hua Lee, Hsinchu (TW); and Jung-Wei Lee, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 21, 2024, as Appl. No. 18/612,701.
Application 18/612,701 is a continuation of application No. 17/650,867, filed on Feb. 14, 2022, granted, now 11,990,512.
Application 17/650,867 is a continuation of application No. 16/937,365, filed on Jul. 23, 2020, granted, now 11,251,268, issued on Feb. 15, 2022.
Claims priority of provisional application 62/966,866, filed on Jan. 28, 2020.
Prior Publication US 2024/0234506 A1, Jul. 11, 2024
Int. Cl. H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0847 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/1037 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 29/42356 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
11. A semiconductor device, comprising:
a fin structure on a substrate;
a first source/drain region on the fin structure and comprising a first region doped with a first lead concentration and a second region doped with a second lead concentration, wherein the second lead concentration is less than the first lead concentration;
a second source/drain region on the fin structure and comprising a third region doped with the first lead concentration and a fourth region doped with the second lead concentration; and
a channel region between the first and second source/drain regions, wherein the channel region is doped with lead at a third lead concentration.