US 12,288,799 B2
Display device, display module, electronic device, and manufacturing method of display device
Koji Kusunoki, Isehara (JP); Shingo Eguchi, Atsugi (JP); and Takayuki Ikeda, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Jul. 20, 2023, as Appl. No. 18/224,152.
Application 18/224,152 is a continuation of application No. 16/896,521, filed on Jun. 9, 2020, granted, now 11,710,760.
Claims priority of application No. 2019-115298 (JP), filed on Jun. 21, 2019.
Prior Publication US 2023/0369381 A1, Nov. 16, 2023
Int. Cl. H01L 27/15 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 33/50 (2010.01); H01L 33/62 (2010.01)
CPC H01L 27/153 (2013.01) [H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 33/505 (2013.01); H01L 33/62 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0066 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A display device comprising:
a first transistor;
a second transistor;
a first light-emitting diode comprising a first semiconductor layer over the first transistor, the first light-emitting diode electrically connected to the first transistor;
a second light-emitting diode comprising a second semiconductor layer over the second transistor, the second light-emitting diode electrically connected to the second transistor;
an insulating layer over and in contact with the first semiconductor layer and the second semiconductor layer;
a light-blocking layer over the insulating layer; and
a color conversion layer over the insulating layer and one of the first light-emitting diode and the second light-emitting diode,
wherein the color conversion layer is in contact with a side surface and a top surface of the light-blocking layer.