US 12,288,787 B2
Semiconductor device
Motoyoshi Kubouchi, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Mar. 22, 2022, as Appl. No. 17/700,519.
Claims priority of application No. 2021-086533 (JP), filed on May 21, 2021.
Prior Publication US 2022/0375933 A1, Nov. 24, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 27/082 (2006.01)
CPC H01L 27/0823 (2013.01) 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate including an active region and an outer peripheral region, wherein
the active region includes a transistor portion and a diode portion,
the outer peripheral region includes a current sensing unit,
a lifetime control region including a lifetime killer is provided from the diode portion to at least a part of the transistor portion, and
the current sensing unit includes a sense transistor non-irradiation region not provided with the lifetime control region and a sense transistor irradiation region provided with the lifetime control region.