US 12,288,786 B2
Shared well structure manufacturing method
Yang Zhou, Hsinchu (TW); Liu Han, Hsinchu (TW); Qingchao Meng, Hsinchu (TW); XinYong Wang, Hsinchu (TW); and ZeJian Cai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); TSMC CHINA COMPANY, LIMITED, Shanghai (CN); and TSMC NANJING COMPANY, LIMITED, Nanjing (CN)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); TSMC CHINA COMPANY, LIMITED, Shanghai (CN); and TSMC NANJING COMPANY, LIMITED, Jiangsu (CN)
Filed on Nov. 24, 2023, as Appl. No. 18/518,706.
Application 18/518,706 is a division of application No. 17/527,883, filed on Nov. 16, 2021, granted, now 11,876,088, issued on Jan. 16, 2024.
Claims priority of application No. 202110641540.8 (CN), filed on Jun. 9, 2021.
Prior Publication US 2024/0088128 A1, Mar. 14, 2024
Int. Cl. H01L 27/02 (2006.01); G06F 30/392 (2020.01); H01L 21/265 (2006.01); H01L 21/74 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 27/092 (2006.01)
CPC H01L 27/0207 (2013.01) [G06F 30/392 (2020.01); H01L 21/26513 (2013.01); H01L 21/74 (2013.01); H01L 21/76898 (2013.01); H01L 21/823892 (2013.01); H01L 23/481 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/0928 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing an integrated circuit (IC) structure, the method comprising:
configuring each of an n-well and a p-well in a first IC die to have a first portion extending in a first direction and second and third portions extending from the first portion in a second direction perpendicular to the first direction; and
forming IC devices comprising a first pickup structure electrically connected to the n-well and a second pickup structure electrically connected to the p-well,
wherein the forming the IC devices comprises forming a PMOS transistor in the second or third portion of the n-well and forming an NMOS transistor in the second or third portion of the p-well.