US 12,288,779 B2
Semiconductor device and manufacturing method thereof
Kei Takahashi, Kanagawa (JP); Koji Kusunoki, Kanagawa (JP); and Hajime Kimura, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/613,189
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Aug. 20, 2020, PCT No. PCT/IB2020/057818
§ 371(c)(1), (2) Date Nov. 22, 2021,
PCT Pub. No. WO2021/038392, PCT Pub. Date Mar. 4, 2021.
Claims priority of application No. 2019-154234 (JP), filed on Aug. 27, 2019.
Prior Publication US 2022/0320064 A1, Oct. 6, 2022
Int. Cl. H01L 25/18 (2023.01); G06F 3/041 (2006.01); G06F 3/042 (2006.01); G06F 3/044 (2006.01); H10K 65/00 (2023.01)
CPC H01L 25/18 (2013.01) [G06F 3/0412 (2013.01); G06F 3/0421 (2013.01); G06F 3/044 (2013.01); H10K 65/00 (2023.02); G06F 2203/04106 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first substrate provided with a display portion;
at least one chip comprising a semiconductor integrated circuit; and
a second substrate overlapping with the display portion,
wherein the display portion comprises a pixel,
wherein the pixel comprises a first light-emitting element, a second light-emitting element, a third light-emitting element and an optical sensor element in matrix,
wherein each of the first light-emitting element, the second light-emitting element, and the third light-emitting element has a different emission color from each other,
wherein the first light-emitting element comprises a first electrode, a common layer over the first electrode, a light-emitting layer over the common layer, and a second electrode over the light-emitting layer,
wherein the optical sensor element comprises a third electrode, the common layer over the third electrode, an active layer over the common layer, and a fourth electrode over the active layer,
wherein the optical sensor element is configured to receive light emitted from the first light-emitting element, the second light-emitting element, and the third light-emitting element,
wherein the display portion is configured to display an image and to capture an image of an object overlapping with the display portion by detection using reflected light of emitted light from the first light-emitting element, the second light-emitting element, and the third light-emitting element,
wherein the chip is mounted on one surface of the first substrate,
wherein the first substrate and the second substrate are fixed so that the one surface of the first substrate and one surface of the second substrate face each other,
wherein the chip comprises a detection circuit of the optical sensor element, an image processing circuit, a driver circuit of the optical sensor element, and a driver circuit of the first light-emitting element, the second light-emitting element, and the third light-emitting element,
wherein the detection circuit of the optical sensor element is configured to detect a near touch[DH1][JH2], and
wherein the detection circuit of the optical sensor element is further configured to output an output signal from the optical sensor element to the image processing circuit by converting an analog signal output from the optical sensor element into a digital signal.