US 12,288,770 B2
Semiconductor packages with embedded wiring on re-distributed bumps
Kuan-Hsiang Mao, San Jose, CA (US); Norazham Mohd Sukemi, San Jose, CA (US); Chin Teck Siong, San Jose, CA (US); Tsung Nan Lo, San Jose, CA (US); and Wen Hung Huang, San Jose, CA (US)
Assigned to NXP B.V., Eindhoven (NL)
Filed by NXP B.V., Eindhoven (NL)
Filed on Apr. 25, 2022, as Appl. No. 17/660,441.
Prior Publication US 2023/0343749 A1, Oct. 26, 2023
Int. Cl. H01L 23/495 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 25/0657 (2013.01) [H01L 21/568 (2013.01); H01L 23/49816 (2013.01); H01L 24/48 (2013.01); H01L 24/92 (2013.01); H01L 25/50 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/92247 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a seed layer on a temporary carrier, the seed layer comprising a plurality of die attach locations and a plurality of wire bond locations associated with each of the plurality of die attach locations;
attaching, to one of the plurality of die attach locations, a die having a plurality of pads;
wire bonding at least one of the plurality of pads to at least one of the plurality of wire bond locations to produce a wire bonded die;
encapsulating the wire bonded die to produce an encapsulated die;
debonding the temporary carrier from the encapsulated die;
after debonding the temporary carrier, forming a re-distribution layer (RDL) upon the encapsulated die; and
forming a passivation layer over the RDL, the passivation layer including openings that extend through the passivation layer to the RDL.