US 12,288,752 B2
Semiconductor packages
Ming-Fa Chen, Taichung (TW); Nien-Fang Wu, Chiayi (TW); Sung-Feng Yeh, Taipei (TW); Tzuan-Horng Liu, Taoyuan (TW); and Chao-Wen Shih, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 5, 2023, as Appl. No. 18/346,887.
Application 18/346,887 is a continuation of application No. 17/338,676, filed on Jun. 4, 2021, granted, now 11,742,297.
Application 17/338,676 is a continuation of application No. 16/658,131, filed on Oct. 20, 2019, granted, now 11,056,438, issued on Jul. 6, 2021.
Claims priority of provisional application 62/867,855, filed on Jun. 27, 2019.
Prior Publication US 2023/0352419 A1, Nov. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0652 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/214 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19105 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first die; and
a through via electrically connected to the first die, comprising a first conductive layer having a first width, a second conductive layer having a second width different from the first width and a first seed layer disposed aside an interface between the first conductive layer and the second conductive layer.