US 12,288,749 B2
Integrated circuit chip including gate electrode with oblique cut surface, and manufacturing method of the same
Inyeal Lee, Seongnam-si (KR); Dongbeen Kim, Suwon-si (KR); Jinwook Kim, Hwaseong-si (KR); Juhun Park, Seoul (KR); Deokhan Bae, Suwon-si (KR); Junghoon Seo, Hwaseong-si (KR); and Myungyoon Um, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 26, 2024, as Appl. No. 18/647,307.
Application 18/647,307 is a continuation of application No. 17/521,080, filed on Nov. 8, 2021, granted, now 11,996,364.
Claims priority of application No. 10-2021-0049825 (KR), filed on Apr. 16, 2021.
Prior Publication US 2024/0274540 A1, Aug. 15, 2024
Int. Cl. H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/535 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC H01L 23/535 (2013.01) [H01L 23/5226 (2013.01); H01L 24/13 (2013.01); H01L 27/0924 (2013.01); H01L 29/0665 (2013.01); H01L 29/41733 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/78391 (2014.09); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01); H01L 2224/13025 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit chip comprising:
a substrate;
first channel active regions on the substrate, and extending in a first direction;
second channel active regions on the substrate, and extending in the first direction, the second channel active regions being spaced apart from the first channel active regions in a second direction intersecting the first direction;
a first gate electrode and a second gate electrode which intersect the second channel active regions;
a third gate electrode and a fourth gate electrode which intersect the first channel active regions; and
a contact electrode between the first gate electrode and the second gate electrode and between the third gate electrode and the fourth gate electrode, the contact electrode including
a stem section in a vertical direction,
a first branch section extending from the stem section in one direction and contacting a source/drain region on the first channel active regions, and
a second branch section extending from the stem section in the other direction and contacting a source/drain region on the second channel active regions,
wherein the first gate electrode and the third gate electrode overlap with each other in the second direction,
wherein the first gate electrode includes a first main portion intersecting the second channel active regions, and a first edge portion extending from the first main portion and facing the third gate electrode,
wherein the first edge portion has a width smaller than a width of the first main portion, and
wherein a distance in the first direction between the first edge portion and the contact electrode is larger than a distance in the first direction between the first main portion and the contact electrode.