US 12,288,738 B2
Semiconductor device package and method of fabricating the same
Younghwan Park, Seongnam-si (KR); Jongseob Kim, Seoul (KR); Jaejoon Oh, Seongnam-si (KR); Soogine Chong, Seoul (KR); and Sunkyu Hwang, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 12, 2021, as Appl. No. 17/227,850.
Claims priority of application No. 10-2020-0150994 (KR), filed on Nov. 12, 2020.
Prior Publication US 2022/0148948 A1, May 12, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 29/20 (2006.01)
CPC H01L 23/49562 (2013.01) [H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 23/3107 (2013.01); H01L 23/367 (2013.01); H01L 24/16 (2013.01); H01L 24/94 (2013.01); H01L 29/2003 (2013.01); H01L 2224/16245 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A semiconductor device package comprising:
a semiconductor device having a horizontal channel structure, the semiconductor device including a plurality of electrode pads on an upper surface of the semiconductor device;
a lead frame including a plurality of conductive members; and
a mold between the plurality of conductive members, wherein the plurality of electrode pads include a source electrode pad, a drain electrode pad, and a gate electrode pad on the upper surface of the semiconductor device,
the plurality of conductive members are bonded directly to the source electrode pad, the drain electrode pad, and the gate electrode pad, respectively, without metal wiring, and
the source electrode pad is directly electrically connected to a source electrode of the semiconductor device, the drain electrode pad is directly electrically connected to a drain electrode of the semiconductor device, and the gate electrode pad is directly electrically connected to a gate electrode of the semiconductor device, without metal wiring.