US 12,288,734 B2
Semiconductor device
Juik Lee, Anyang-si (KR); Jong-Min Lee, Hwaseong-si (KR); Jimin Choi, Seoul (KR); Yeonjin Lee, Suwon-si (KR); and Jeon Il Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 6, 2022, as Appl. No. 17/714,202.
Claims priority of application No. 10-2021-0099301 (KR), filed on Jul. 28, 2021.
Prior Publication US 2023/0030117 A1, Feb. 2, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/17181 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate including a first side and a second side opposite to each other;
a plurality of penetrating parts penetrating the substrate and arranged in a first direction and a second direction;
a first penetrating structure including at least two penetrating parts among the plurality of penetrating parts and a connecting part connecting the at least two penetrating parts, the connecting part penetrating a part of the substrate from the first side of the substrate; and
a second penetrating structure including at least one penetrating part among the plurality of penetrating parts, the second penetrating structure being spaced apart from the first penetrating structure, and an area of the first penetrating structure being more than twice an area of the second penetrating structure, as viewed from the first side of the substrate,
wherein the first direction and the second direction are parallel to the first side of the substrate, and
wherein the second direction intersects the first direction.