US 12,288,729 B2
Integrated circuit package and method
Tzu-Sung Huang, Tainan (TW); Ming Hung Tseng, Toufen Township (TW); Yen-Liang Lin, Taichung (TW); Hao-Yi Tsai, Hsinchu (TW); Chi-Ming Tsai, New Taipei (TW); Chung-Shi Liu, Hsinchu (TW); Chih-Wei Lin, Zhubei (TW); and Ming-Che Ho, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 7, 2024, as Appl. No. 18/435,362.
Application 17/201,856 is a division of application No. 16/427,569, filed on May 31, 2019, granted, now 10,950,519, issued on Mar. 16, 2021.
Application 18/435,362 is a continuation of application No. 18/297,927, filed on Apr. 10, 2023, granted, now 11,935,804.
Application 18/297,927 is a continuation of application No. 17/201,856, filed on Mar. 15, 2021, granted, now 11,626,339, issued on Apr. 11, 2023.
Prior Publication US 2024/0178091 A1, May 30, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/16 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/3157 (2013.01) [H01L 21/56 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 23/16 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
an integrated circuit die;
a through-via disposed adjacent to the integrated circuit die, wherein the through-via comprises;
a first portion of the through-via;
a second portion of the through-via over the first portion of the through-via; and
a third portion of the through-via over the second portion of the through-via, wherein a first material of the first portion of the through-via, a second material of the second portion of the through-via, and a third material of the third portion of the through-via are different from each other;
an encapsulant surrounding each of the through-via and the integrated circuit die; and
a redistribution structure over and electrically coupled to the through-via.