US 12,288,728 B2
Semiconductor device and method of manufacturing a semiconductor device
Kyeong Tae Kim, Incheon (KR); Yi Seul Han, Incheon (KR); Jae Beom Shim, Incheon (KR); and Tae Yong Lee, Gyeonggi-do (KR)
Assigned to AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD., Singapore (SG)
Filed by Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed on Mar. 4, 2024, as Appl. No. 18/594,321.
Application 18/594,321 is a continuation of application No. 18/096,914, filed on Jan. 13, 2023, granted, now 11,978,687.
Application 18/096,914 is a continuation of application No. 17/327,979, filed on May 24, 2021, granted, now 11,557,524.
Application 17/327,979 is a continuation of application No. 16/419,650, filed on May 22, 2019, granted, now 11,018,067, issued on May 25, 2021.
Prior Publication US 2024/0266238 A1, Aug. 8, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/3128 (2013.01) [H01L 21/56 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 24/09 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electronic apparatus, comprising:
a first electronic device comprising a first electronic device bottom side, a first electronic device top side comprising first electronic device terminals, and a first electronic device sidewall between the first electronic device top side and the first electronic device bottom side;
a first dielectric structure comprising:
a dielectric structure top portion over the first electronic device top side;
a dielectric structure sidewall portion over the first electronic device sidewall and extending from the dielectric structure top portion; and
a dielectric structure bottom portion extending from the dielectric structure sidewall portion, wherein the dielectric structure bottom portion extends away from the first electronic device sidewall;
a first conductive structure comprising:
a first conductive structure top portion over the dielectric structure top portion and coupled to at least one of the first electronic device terminals;
a first conductive structure sidewall portion over the dielectric structure sidewall portion and extending from the first conductive structure top portion; and
a first conductive structure bottom portion over the dielectric structure bottom portion and extending from the first conductive structure sidewall portion, wherein the first conductive structure bottom portion extends away from the first electronic device sidewall;
a second conductive structure over the first electronic device;
a second dielectric structure over the second conductive structure; and
a first interconnect structure coupled to the first conductive structure top portion and the second conductive structure.