US 12,288,706 B2
Parameterizing x-ray scattering measurement using slice-and-image tomographic imaging of semiconductor structures
Hans Michael Stiepan, Aalen (DE); Thomas Korb, Schwaebisch Gmuend (DE); Eugen Foca, Ellwangen (DE); Alex Buxbaum, San Ramon, CA (US); Dmitry Klochkov, Schwaebisch Gmuend (DE); and Jens Timo Neumann, Aalen (DE)
Assigned to Carl Zeiss SMT GmbH, Oberkochen (DE)
Filed by Carl Zeiss SMT GmbH, Oberkochen (DE)
Filed on Apr. 26, 2022, as Appl. No. 17/729,385.
Prior Publication US 2023/0343619 A1, Oct. 26, 2023
Int. Cl. H01L 21/67 (2006.01); G01N 23/046 (2018.01); G01N 23/083 (2018.01); G01N 23/20 (2018.01); G06T 7/00 (2017.01)
CPC H01L 21/67288 (2013.01) [G01N 23/046 (2013.01); G01N 23/083 (2013.01); G01N 23/20083 (2013.01); G06T 7/0006 (2013.01); G06T 7/001 (2013.01); G01N 2223/04 (2013.01); G01N 2223/045 (2013.01); G01N 2223/401 (2013.01); G01N 2223/6116 (2013.01); G06T 2207/10081 (2013.01); G06T 2207/30148 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method, comprising:
performing a slice-and-image tomographic measurement to obtain one or more three-dimensional volume images of a wafer comprising semiconductor structures;
parameterizing an x-ray scattering measurement based on the one or more three-dimensional volume images; and
after parameterizing the x-ray scattering measurement, performing the x-ray scattering measurement to obtain one or more measurement spectra of the wafer or one or more further wafers comprising the semiconductor structures or further semiconductor structures,
wherein the x-ray scattering measurement is performed in-line of a production line, and the slice-and-image measurement is performed out-of-line of the production line.