US 12,288,693 B2
Etching solution, method for treating substrate with the etching solution, and method for manufacturing semiconductor device
Manami Oshio, Yamaguchi (JP); and Naoto Nomura, Yamaguchi (JP)
Assigned to TOKUYAMA CORPORATION, Yamaguchi (JP)
Appl. No. 18/277,177
Filed by TOKUYAMA CORPORATION, Yamaguchi (JP)
PCT Filed Mar. 1, 2023, PCT No. PCT/JP2023/007478
§ 371(c)(1), (2) Date Aug. 14, 2023,
PCT Pub. No. WO2023/167220, PCT Pub. Date Sep. 7, 2023.
Claims priority of application No. 2022-033292 (JP), filed on Mar. 4, 2022.
Prior Publication US 2024/0034933 A1, Feb. 1, 2024
Int. Cl. H01L 21/3213 (2006.01); C09K 13/00 (2006.01); C09K 13/04 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/32134 (2013.01) [C09K 13/00 (2013.01); C09K 13/04 (2013.01); H01L 21/31105 (2013.01); H01L 21/31111 (2013.01)] 7 Claims
 
1. A method of treating a substrate, the method comprising a step of bringing an etching solution into contact with a substrate comprising a silicon oxide film and a silicon carbonitride film, wherein the etching solution is composed of a homogeneous solution comprising phosphoric acid, water, and a cerium ion, wherein a content of a tetravalent cerium ion contained in the etching solution is 0.001 mol/L or greater and 0.2 mol/L or less.