US 12,288,683 B2
Method of manufacturing semiconductor device, substrate processing method, non-transitory computer-readable recording medium and substrate processing apparatus
Yasunobu Koshi, Toyama (JP); Kazuyuki Okuda, Toyama (JP); Yoshitomo Hashimoto, Toyama (JP); and Katsuyoshi Harada, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Mar. 17, 2022, as Appl. No. 17/697,688.
Application 17/697,688 is a continuation of application No. PCT/JP2020/029951, filed on Aug. 5, 2020.
Claims priority of application No. 2019-171529 (JP), filed on Sep. 20, 2019.
Prior Publication US 2022/0208544 A1, Jun. 30, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01J 37/32816 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01J 2237/332 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising
(A) forming a film containing a predetermined element and nitrogen on a substrate by performing a cycle a predetermined number of times,
wherein the cycle comprises:
(a) forming a first layer by supplying a source gas containing the predetermined element and a halogen element to the substrate heated to a first temperature in a process chamber;
(b) forming a second layer by modifying the first layer by supplying a first modification gas containing hydrogen free of nitrogen and exited by plasma to the substrate in the process chamber; and
(c) forming a third layer by modifying the second layer by supplying a second modification gas containing nitrogen and hydrogen and exited by plasma to the substrate in the process chamber, and
wherein a supply time TH of supplying the first modification gas in (b) is set to be longer than a supply time TN of supplying the second modification gas in (c).