US 12,288,682 B2
Processing method of wafer
Youngsuk Kim, Tokyo (JP)
Assigned to DISCO CORPORATION, Tokyo (JP)
Filed by DISCO CORPORATION, Tokyo (JP)
Filed on May 12, 2022, as Appl. No. 17/663,066.
Claims priority of application No. 2021-086011 (JP), filed on May 21, 2021.
Prior Publication US 2022/0375742 A1, Nov. 24, 2022
Int. Cl. H01L 21/02 (2006.01); B23K 26/38 (2014.01); B23K 103/00 (2006.01)
CPC H01L 21/0201 (2013.01) [B23K 26/38 (2013.01); B23K 2103/56 (2018.08)] 15 Claims
OG exemplary drawing
 
1. A processing method of a wafer in which the wafer having an outer circumferential region that is beveled is ground to be thinned, the processing method comprising:
a trimming step of making a cutting blade cut into the outer circumferential region that is beveled from one surface side of the wafer and annularly cutting the outer circumferential region that is beveled to remove at least part of the outer circumferential region that is beveled; and
a cutting surface treatment step of, after execution of the trimming step, locally supplying energy to a cutting surface that is formed in the outer circumferential region in the trimming step;
wherein the trimming step results in a damage layer being formed in the vicinity of the cutting surface and wherein a portion of the damage layer is removed during the treatment step,
wherein the wafer has a thickness direction and a perpendicular longitudinal direction, wherein the outer circumferential region is spaced from a central region of the wafer in the longitudinal direction,
wherein during the trimming step, a beveled portion of the outer circumferential region of the wafer remains after the trimming step whereby the cutting surface exposed has a first surface extending in the longitudinal direction and a second surface extending in the thickness direction, wherein the damage layer comprises a first portion extending in the longitudinal direction and a second portion extending in the thickness direction,
wherein the treatment step comprises removing the second portion of the damage layer extending in the thickness direction.
 
7. A processing method of a wafer in which the wafer having an outer circumferential region that is beveled is to be ground to be thinned, the processing method comprising:
a trimming step of making a cutting blade cut into the outer circumferential region that is beveled from one surface side of the wafer and annularly cutting the outer circumferential region that is beveled to remove at least part of the outer circumferential region that is beveled and thereby exposing a cutting surface formed in the outer circumferential region in the trimming step, whereby a damage layer is formed in the vicinity of the cutting surface; and
a treatment step of, after execution of the trimming step, locally supplying energy to the damage layer,
wherein the wafer has a thickness direction and a perpendicular longitudinal direction, wherein the outer circumferential region is spaced from a central region of the wafer in the longitudinal direction,
wherein during the trimming step, a beveled portion of the outer circumferential region of the wafer remains after the trimming step whereby the cutting surface exposed has a first surface extending in the longitudinal direction and a second surface extending in the thickness direction, wherein the damage layer comprises a first portion extending in the longitudinal direction and a second portion extending in the thickness direction,
wherein the treatment step comprises removing the second portion of the damage layer extending in the thickness direction.