| CPC H01J 37/32935 (2013.01) [H01J 37/20 (2013.01); H01J 37/32091 (2013.01); H01J 37/32642 (2013.01); H01J 37/32733 (2013.01); H01L 22/20 (2013.01); H01J 2237/334 (2013.01)] | 19 Claims |

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1. A substrate processing apparatus comprising:
a process module that includes a stage provided inside a chamber, having a first placement surface on which a substrate is to be placed and a second placement surface disposed on an outer periphery of the first placement surface, and an edge ring placed on the second placement surface;
a measurement unit that measures an etching rate of the substrate; and
a controller, wherein
the controller is configured to control the substrate processing apparatus to transfer the substrate to different transfer positions on the first placement surface and etch the substrate for each transfer position under a specific processing condition,
the controller is configured to control the substrate processing apparatus to acquire etching rates at a plurality of points on a concentric circle of the substrate in a vicinity of an end portion of the substrate, for each transfer position, from the measurement unit,
the controller is configured to control the substrate processing apparatus to generate an approximate curve of each of the concentric circles in a circumferential direction based on each of the acquired etching rates for each transfer position,
the controller is configured to control the substrate processing apparatus to calculate each linear expression representing a movement direction of the substrate, based on the generated approximate curve for each transport position, and
the controller is configured to control the substrate processing apparatus to calculate an intersection coordinate of the calculated linear expressions.
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