US 12,288,676 B2
Stage and substrate processing apparatus
Takayuki Ishii, Miyagi (JP); Kazuya Nagaseki, Miyagi (JP); and Michishige Saito, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 3, 2021, as Appl. No. 17/337,696.
Claims priority of application No. 2020-103142 (JP), filed on Jun. 15, 2020.
Prior Publication US 2021/0391153 A1, Dec. 16, 2021
Int. Cl. H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01)
CPC H01J 37/32724 (2013.01) [H01L 21/68757 (2013.01); H01J 2237/2007 (2013.01); H01L 21/6831 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A stage, comprising:
a first member made of a first material having a density of 5.0 g/cm3 or less;
a second member joined to the first member and made of a second material having a linear expansion coefficient of 5.0×10−6/K or less and a thermal conductivity of 100 W/mK or more;
a layer located between the first member and the second member, the layer being directly adjacent to both of the first and second members with no gap therebetween, wherein a composition ratio of the first material and the second material changes in a linear manner or a stepwise manner throughout the layer from the first member towards the second member; and
a flow passage for a temperature control medium formed in both of the first member and the second member, the flow passage being provided across the first member, the layer and the second member.