US 12,288,671 B2
Film deposition apparatus for fine pattern forming
Kazuhide Hasebe, Yamanashi (JP); Shigeru Nakajima, Yamanashi (JP); Jun Ogawa, Yamanashi (JP); and Hiroki Murakami, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Nov. 30, 2023, as Appl. No. 18/524,767.
Application 13/848,849 is a division of application No. 12/567,834, filed on Sep. 28, 2009, granted, now 8,426,117, issued on Apr. 23, 2013.
Application 18/524,767 is a continuation of application No. 17/808,375, filed on Jun. 23, 2022, granted, now 11,881,379.
Application 17/808,375 is a continuation of application No. 16/202,745, filed on Nov. 28, 2018, granted, now 11,404,271, issued on Aug. 2, 2022.
Application 16/202,745 is a continuation of application No. 13/848,849, filed on Mar. 22, 2013, granted, now 10,176,992, issued on Jan. 8, 2019.
Claims priority of application No. 2008-251679 (JP), filed on Sep. 29, 2008; and application No. 2009-206443 (JP), filed on Sep. 7, 2009.
Prior Publication US 2024/0096595 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); G03F 7/40 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/316 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01)
CPC H01J 37/32091 (2013.01) [C23C 16/02 (2013.01); C23C 16/402 (2013.01); C23C 16/403 (2013.01); C23C 16/45536 (2013.01); G03F 7/40 (2013.01); H01J 37/3244 (2013.01); H01J 37/32834 (2013.01); H01L 21/027 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/31608 (2013.01); H01L 21/31616 (2013.01); H01L 21/32139 (2013.01); H01L 21/76816 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A film deposition apparatus comprising:
a process chamber configured to process a substrate including a pattern on a thin film, the pattern having lines and spaces therein;
a source gas supplying device configured to supply a source gas to the process chamber;
an oxygen-containing gas supplying device configured to supply an oxygen-containing gas to the process chamber;
a plasma generating device configured to generate a given plasma in the process chamber;
a heating device configured to heat the substrate; and
a controller configured to:
(a) slim the pattern in the process chamber using a first oxygen-containing gas plasma generated by the plasma generating device while causing the heating device to heat the substrate at a first temperature of 100 degrees Celsius or less;
(b) cause the heating device to heat the substrate at a second temperature of room temperature to 300 degrees C.; and
(c) form an oxide film on the slimmed pattern and the thin film in the process chamber by adsorbing the source gas on the slimmed pattern and the thin film and oxidizing the source gas using a second oxygen-containing gas plasma generated by the plasma generating device while causing the heating device to heat the substrate at the second temperature, the adsorbing the source gas and the oxidizing the source gas being performed alternately, and generating the second oxygen-containing gas plasma being performed intermittently.