US 12,288,646 B2
Capacitor with connection conductor contacting a surface of a substrate
Yoshinari Take, Tokyo (JP); Yoshio Aoyagi, Tokyo (JP); and Hidetoshi Masuda, Tokyo (JP)
Assigned to TAIYO YUDEN CO., LTD., Tokyo (JP)
Appl. No. 17/762,536
Filed by TAIYO YUDEN CO., LTD., Tokyo (JP)
PCT Filed Sep. 28, 2020, PCT No. PCT/JP2020/036515
§ 371(c)(1), (2) Date Mar. 22, 2022,
PCT Pub. No. WO2021/060552, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 2019-176951 (JP), filed on Sep. 27, 2019.
Prior Publication US 2022/0384113 A1, Dec. 1, 2022
Int. Cl. H10D 1/00 (2025.01); H01G 4/252 (2006.01); H01G 4/30 (2006.01); H01G 4/33 (2006.01); H10D 1/68 (2025.01); H01G 4/008 (2006.01); H01G 4/012 (2006.01); H01G 4/12 (2006.01)
CPC H01G 4/252 (2013.01) [H01G 4/306 (2013.01); H01G 4/33 (2013.01); H10D 1/043 (2025.01); H10D 1/716 (2025.01); H01G 4/008 (2013.01); H01G 4/012 (2013.01); H01G 4/1236 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A capacitor comprising:
an Si substrate;
an MIM structure disposed on the Si substrate, the MIM structure including a first dielectric layer, a first electrode layer disposed on one side of the first dielectric layer and composed of a first conductive material, and a second electrode layer disposed on the other side of the first dielectric layer;
a first external electrode disposed on the Si substrate;
a second external electrode disposed on the Si substrate; and
a connection conductor connecting between the first electrode layer and the first external electrode, the connection conductor including a contact portion and plural connecting portions, one connecting portion being connected to one end of the contact portion and another connecting portion being connected to the other end of the contact portion, wherein, in a cross section of the connection conductor, the contact portion and plural connecting portions form a U-shape such that (i) the contact portion directly contacts surface of the Si substrate and (ii) both the plural connecting portions extend in a perpendicular direction from the contact portion and from the surface of the Si substrate towards the first external electrode,
wherein plural trenches are disposed on the surface of the Si substrate, and the MIM structure is disposed on the Si substrate so as to be embedded in at least one of the plural trenches,
wherein the plural trenches include at least one empty trench in which the MIM structure is not embedded, and the at least one empty trench is at least partially covered by the contact portion, and
wherein a depth-direction dimension of the at least one empty trench is smaller than a depth-direction dimension of another trench in which the MIM structure is embedded.