US 12,287,578 B2
Cyclic method for reactive development of photoresists
Hamed Hajibabaeinajafabadi, Albany, NY (US); Akiteru Ko, Albany, NY (US); Yu-Hao Tsai, Albany, NY (US); and Sergey Voronin, Albany, NY (US)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 15, 2022, as Appl. No. 17/888,135.
Prior Publication US 2024/0053684 A1, Feb. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/36 (2006.01); H01L 21/308 (2006.01)
CPC G03F 7/36 (2013.01) [H01L 21/3086 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
receiving a substrate comprising a photoresist film comprising exposed and unexposed portions;
etching parts of the unexposed portions of the photoresist film with a developing gas in a process chamber to leave a residual part of the unexposed portions;
purging the developing gas from the process chamber with a first purging gas, the first purging gas being an inert gas;
after purging the developing gas, etching the residual part of the unexposed portions with the developing gas;
purging the developing gas from the process chamber with a second purging gas, the second purging gas being a reactive gas; and
etching the substrate using exposed portions of the photoresist film as a mask.