US 12,287,575 B2
Photoresist and method of formation and use
Keng-Chu Lin, Ping-Tung (TW); Joung-Wei Liou, Zhudong (TW); Cheng-Han Wu, Taichung (TW); and Ya Hui Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 18, 2023, as Appl. No. 18/302,608.
Application 15/156,019 is a division of application No. 13/973,512, filed on Aug. 22, 2013, granted, now 9,341,945, issued on May 17, 2016.
Application 18/302,608 is a continuation of application No. 17/007,897, filed on Aug. 31, 2020, granted, now 11,650,500.
Application 17/007,897 is a continuation of application No. 15/156,019, filed on May 16, 2016, granted, now 10,761,427, issued on Sep. 1, 2020.
Prior Publication US 2023/0251571 A1, Aug. 10, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC G03F 7/0388 (2013.01) [G03F 7/038 (2013.01); G03F 7/0382 (2013.01); G03F 7/0397 (2013.01); G03F 7/11 (2013.01); G03F 7/167 (2013.01); G03F 7/2041 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); H01L 21/0271 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01)] 20 Claims
 
1. A photoresist comprising:
a linear section of carbon bonds, wherein at least one of the carbon bonds within the linear section is a double bond;
a cross-linking agent, wherein the cross-linking agent is part of a compositional component of the photoresist; and
a protective layer located over a photoresist polymer layer, the photoresist polymer layer comprising the linear section of carbon bonds.