US 12,287,569 B2
Pellicle film for photolithography, pellicle, photolithography mask, photolithography system, and method of producing pellicle film for photolithography
Yousuke Ono, Sodegaura (JP); Hisako Ishikawa, Ichihara (JP); Ryohei Ogawa, Ichihara (JP); Atsushi Okubo, Tokyo (JP); Kazuo Kohmura, Iwakuni (JP); Atsuko Sekiguchi, Tsukuba (JP); Yuichi Kato, Tsukuba (JP); Takeo Yamada, Tsukuba (JP); and Ying Zhou, Tsukuba (JP)
Assigned to MITSUI CHEMICALS, INC., Tokyo (JP); and NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo (JP)
Appl. No. 17/996,098
Filed by MITSUI CHEMICALS, INC., Tokyo (JP); and NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo (JP)
PCT Filed Apr. 2, 2021, PCT No. PCT/JP2021/014353
§ 371(c)(1), (2) Date Oct. 13, 2022,
PCT Pub. No. WO2021/210432, PCT Pub. Date Oct. 21, 2021.
Claims priority of application No. 2020-074343 (JP), filed on Apr. 17, 2020.
Prior Publication US 2023/0194977 A1, Jun. 22, 2023
Int. Cl. G03F 1/62 (2012.01)
CPC G03F 1/62 (2013.01) 14 Claims
OG exemplary drawing
 
1. A pellicle film for photolithography, comprising a carbon nanotube film, wherein:
the carbon nanotube film contains carbon nanotubes;
the carbon nanotube film transmits 80% or more of EUV light at a wavelength of 13.5 nm;
the carbon nanotube film has a thickness from 1 nm to 50 nm;
wherein a 3σ of a reflectance is 15% or less in a case in which the carbon nanotube film is disposed on a silicon substrate, and a reflectance of the disposed carbon nanotube film is measured using a reflectance spectrophotometer-based film thickness meter under the following conditions:
a diameter of measurement spots of 20 μm;
a reference measurement wavelength of 285 nm;
a number of measurement spots of 121 spots; and
a distance between centers of adjacent measurement spots of 40 μm.