US 12,287,568 B2
Low-temperature direct growth method of multilayer graphene, pellicle for extreme ultraviolet lithography using the same, and method for manufacturing the pellicle
Hyeong Keun Kim, Yongin-si (KR); Seul Gi Kim, Yongin-si (KR); Hyun Mi Kim, Seoul (KR); Jin Woo Cho, Seoul (KR); and Hye Young Kim, Bucheon-si (KR)
Assigned to Korea Electronics Technology Institute, Seongnam-si (KR)
Filed by KOREA ELECTRONICS TECHNOLOGY INSTITUTE, Seongnam-si (KR)
Filed on Mar. 18, 2022, as Appl. No. 17/698,404.
Claims priority of application No. 10-2021-0045887 (KR), filed on Apr. 8, 2021.
Prior Publication US 2022/0326602 A1, Oct. 13, 2022
Int. Cl. G03F 1/62 (2012.01); C01B 32/184 (2017.01); G03F 7/00 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/16 (2006.01)
CPC G03F 1/62 (2013.01) [C01B 32/184 (2017.08); G03F 7/70033 (2013.01); H01L 21/02214 (2013.01); H01L 21/324 (2013.01); H01L 29/1606 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A low-temperature direct growth method of multilayer graphene, the method comprising:
forming an etch stopper on a substrate;
forming a seed layer on the etch stopper, the seed layer including at least one of amorphous boron, BN, BCN, B4C, or Me-X (Me is at least one of Si, Ti, Mo, or Zr, and X is at least one of B, C, or N);
forming a metal catalyst layer on the seed layer;
forming an amorphous carbon layer on the metal catalyst layer; and
directly growing multilayer graphene on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450° C. to 600° C.