US 12,287,555 B2
Photosensitive device and display panel
Haijun Wang, Guangdong (CN); Xin Zhang, Guangdong (CN); Miao Jiang, Guangdong (CN); and Jiangbo Yao, Guangdong (CN)
Assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
Appl. No. 17/254,938
Filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong (CN)
PCT Filed Dec. 14, 2020, PCT No. PCT/CN2020/136101
§ 371(c)(1), (2) Date Dec. 22, 2020,
PCT Pub. No. WO2022/110331, PCT Pub. Date Jun. 2, 2022.
Claims priority of application No. 202011358092.2 (CN), filed on Nov. 27, 2020.
Prior Publication US 2022/0350184 A1, Nov. 3, 2022
Int. Cl. G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); H10F 30/282 (2025.01)
CPC G02F 1/1368 (2013.01) [G02F 1/136209 (2013.01); H10F 30/282 (2025.01)] 7 Claims
OG exemplary drawing
 
1. A photosensitive device, comprising:
a substrate;
a photosensitive functional layer disposed on the substrate, wherein the photosensitive functional layer comprises a thin film transistor layer and a quantum dot layer; and
a light shielding layer disposed on a surface of the substrate away from the photosensitive functional layer;
wherein the quantum dot layer is disposed on the substrate and is configured to emit an excitation light having a wavelength within a predetermined wavelength range under an excitation of an external light, and the thin film transistor layer has a highest absorption intensity of the excitation light; and
wherein the thin film transistor layer comprises at least one kind of an amorphous silicon thin film transistor and an oxide thin film transistor; and
wherein the thin film transistor layer is disposed on a surface of the quantum dot layer facing away from or facing the substrate, and the thin film transistor layer is configured to absorb the external light or the excitation light incident on its surface to perform a photoelectric conversion operation;
wherein the quantum dot layer comprises an adhesive layer and a plurality of quantum dots filled in the adhesive layer, and the adhesive layer is made of photoresist;
wherein the quantum dot layer is disposed between the thin film transistor layer and the substrate and is spaced from the light shielding layer, and the light shielding layer is made of resin with carbon black.