US 12,287,514 B2
Fabrication method for photonic devices
Nikhil Kumar, Palo Alto, CA (US)
Assigned to PSIQUANTUM, CORP., Palo Alto, CA (US)
Filed by PsiQuantum, Corp., Palo Alto, CA (US)
Filed on Jul. 18, 2022, as Appl. No. 17/867,069.
Application 17/867,069 is a continuation of application No. 17/189,050, filed on Mar. 1, 2021, granted, now 11,391,891.
Claims priority of provisional application 62/984,759, filed on Mar. 3, 2020.
Prior Publication US 2022/0357514 A1, Nov. 10, 2022
Int. Cl. G02B 6/293 (2006.01); G02B 6/036 (2006.01); G02B 6/132 (2006.01); G02B 6/12 (2006.01)
CPC G02B 6/2935 (2013.01) [G02B 6/036 (2013.01); G02B 6/132 (2013.01); G02B 2006/12145 (2013.01); G02B 2006/12176 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for constructing a device, the method comprising:
receiving a first wafer comprising a first layer stack, wherein the first layer stack comprises:
a first substrate layer;
an electrode layer disposed on the first substrate layer; and
an electro-optic layer disposed on the electrode layer;
receiving a second wafer, the second wafer comprising:
a second cladding layer;
a second substrate layer disposed on the second cladding layer; and
a second strip waveguide structure disposed within the second cladding layer;
bonding the electro-optic layer of first layer stack to the second cladding layer of the second wafer;
after bonding the electro-optic layer to the second cladding layer:
removing the first substrate layer;
etching the electrode layer to split the electrode layer into a first electrode separated from a second electrode;
depositing a first strip waveguide structure between the first and second electrodes; and
depositing a first cladding layer on the first electrode, the second electrode, and the first strip waveguide structure.