US 12,287,246 B2
Sensor element and method for producing a sensor element
Anke Weidenfelder, Graz (AT); Jan Ihle, Raaba-Grambach (AT); Bernhard Ostrick, Teltow (DE); and Jeffrey Krotosky, Frisco, TX (US)
Assigned to TDK Electronics AG, Munich (DE)
Appl. No. 17/639,781
Filed by TDK Electronics AG, Munich (DE)
PCT Filed Aug. 31, 2021, PCT No. PCT/EP2021/073974
§ 371(c)(1), (2) Date Mar. 2, 2022,
PCT Pub. No. WO2022/049056, PCT Pub. Date Mar. 10, 2022.
Claims priority of application No. 102020122923.2 (DE), filed on Sep. 2, 2020.
Prior Publication US 2022/0357214 A1, Nov. 10, 2022
Int. Cl. G01K 7/20 (2006.01); B81C 1/00 (2006.01); G01K 7/16 (2006.01)
CPC G01K 7/20 (2013.01) [B81C 1/00888 (2013.01); G01K 2007/163 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A sensor element comprising:
at least one carrier having a top side and a bottom side, the top side being electrically insulating;
at least one functional layer comprising a material with a temperature-dependent electrical resistance, the functional layer being arranged on the carrier;
at least two electrodes arranged on the carrier at a distance from one another, wherein each electrode has a plurality of electrode fingers, and wherein the electrode fingers of the two electrodes are arranged alternately with respect to each other; and
at least two contact pads configured for electrically contacting the sensor element,
wherein a respective contact pad is arranged directly on a partial region of one of the at least two electrodes,
wherein the functional layer comprises an NTC ceramic based on an oxidic material in a perovskite structure type or a spinel structure type, or wherein the functional layer comprises an NTC ceramic based on a carbide or a nitride material, or wherein the functional layer comprises a thin layer of vanadium oxide or SiC,
wherein the sensor element is configured to measure a temperature, and
wherein the sensor element is configured for direct integration into an electrical system as a discrete component.