US 12,286,722 B2
Light-induced aluminum plating on silicon for solar cell metallization
Meng Tao, Fountain Hills, AZ (US); and Laidong Wang, Cupertino, CA (US)
Assigned to ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US)
Filed by Arizona Board of Regents on behalf of Arizona State University, Scottsdale, AZ (US)
Filed on Feb. 23, 2024, as Appl. No. 18/586,085.
Application 16/432,702 is a division of application No. 15/079,359, filed on Mar. 24, 2016, abandoned.
Application 18/586,085 is a continuation of application No. 17/725,855, filed on Apr. 21, 2022, granted, now 11,932,960.
Application 17/725,855 is a continuation of application No. 16/113,822, filed on Aug. 27, 2018, abandoned.
Application 17/725,855 is a continuation in part of application No. 16/432,702, filed on Jun. 5, 2019, granted, now 11,682,739, issued on Jun. 20, 2023.
Application 15/079,359 is a continuation of application No. PCT/US2014/067338, filed on Nov. 25, 2014.
Claims priority of provisional application 62/551,037, filed on Aug. 28, 2017.
Claims priority of provisional application 62/055,378, filed on Sep. 25, 2014.
Claims priority of provisional application 62/018,320, filed on Jun. 27, 2014.
Claims priority of provisional application 61/908,824, filed on Nov. 26, 2013.
Prior Publication US 2024/0240346 A1, Jul. 18, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C25D 3/66 (2006.01); C25D 3/54 (2006.01); C25D 5/00 (2006.01); C25D 5/10 (2006.01); C25D 5/50 (2006.01); C25D 7/12 (2006.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC C25D 3/665 (2013.01) [C25D 3/54 (2013.01); C25D 5/011 (2020.08); C25D 5/10 (2013.01); C25D 5/50 (2013.01); C25D 7/12 (2013.01); H01L 31/022425 (2013.01); H01L 31/022458 (2013.01); H01L 31/028 (2013.01); H01L 31/068 (2013.01); H01L 31/0682 (2013.01); H01L 31/1804 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for processing a silicon solar cell, the method comprising:
preparing an ionic liquid comprising aluminum chloride (AlCl3) and an organic halide;
patterning a partially-processed silicon solar cell to expose an n-type surface of a silicon substrate;
bringing the n-type surface of the silicon substrate of the partially processed silicon solar cell into contact with the ionic liquid, wherein the n-type surface does not comprise a seed layer;
illuminating the n-type surface, wherein the illumination passes through the ionic liquid, wherein the illumination is generated at least partially by a light source comprising at least one light-emitting diode, and wherein a photo-generated current is generated by the illumination;
while illuminating the silicon substrate with the light source, applying a current between an anode and a cathode to generate an applied current, wherein the applied current generates a current density of between 30 milliamps per centimeter squared (mA/cm2) and 50 mA/cm2; and
depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes the applied current that does not exceed the photo-generated current generated by the illumination.