US 12,286,718 B2
Method for producing nitride semiconductor photoelectrode
Yuya Uzumaki, Musashino (JP); Sayumi Sato, Musashino (JP); Yoko Ono, Musashino (JP); and Takeshi Komatsu, Musashino (JP)
Assigned to Nippon Telegraph and Telephone Corporation, Tokyo (JP)
Appl. No. 17/292,361
Filed by Nippon Telegraph and Telephone Corporation, Tokyo (JP)
PCT Filed Nov. 19, 2019, PCT No. PCT/JP2019/045259
§ 371(c)(1), (2) Date May 7, 2021,
PCT Pub. No. WO2020/116151, PCT Pub. Date Jun. 11, 2020.
Claims priority of application No. 2018-226249 (JP), filed on Dec. 3, 2018.
Prior Publication US 2022/0002886 A1, Jan. 6, 2022
Int. Cl. C25B 9/50 (2021.01); C23C 14/02 (2006.01); C23C 14/14 (2006.01); C23C 14/22 (2006.01); C23C 14/58 (2006.01); C23C 16/18 (2006.01); C23C 16/34 (2006.01); C25B 11/049 (2021.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01)
CPC C25B 9/50 (2021.01) [C23C 14/024 (2013.01); C23C 14/14 (2013.01); C23C 14/221 (2013.01); C23C 14/5806 (2013.01); C23C 16/18 (2013.01); C23C 16/34 (2013.01); C25B 11/049 (2021.01); H01L 21/0228 (2013.01); H01L 21/28556 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for producing a nitride semiconductor photoelectrode comprising:
a first step of forming a 2 μm thick n-type gallium nitride layer having a carrier density of 3×1018 cm−3 directly on an insulating or conductive substrate;
a second step of forming a 100 nm thick indium gallium nitride layer having an indium composition ratio of 5% directly on the n-type gallium nitride layer;
a third step of forming a 1 nm thick nickel layer directly on the indium gallium nitride layer; and
a fourth step of heat-treating the nickel layer in an oxygen atmosphere,
therein the 1 nm thick nickel layer after the fourth step becomes an oxygen-excessive nickel oxide layer having a 2 nm thickness and exhibits characteristics as a p-type semiconductor.