	US 12,285,823 B2
	Low melting-point bonding member, method for producing same, semiconductor electronic circuit, and method for mounting said semiconductor electronic circuit
Hirotoshi Nishi, Kitakyushu (JP); Takeshi Sawai, Kitakyushu (JP); Kenichirou Shirokawa, Kitakyushu (JP); and Souichirou Omae, Kitakyushu (JP)
Assigned to SHINRYO CORPORATION, Kitakyushu (JP)
Appl. No. 18/043,854
Filed by SHINRYO CORPORATION, Kitakyushu (JP)
PCT Filed Aug. 27, 2021, PCT No. PCT/JP2021/031505 § 371(c)(1), (2) Date Mar. 2, 2023, PCT Pub. No. WO2022/050185, PCT Pub. Date Mar. 10, 2022.
Claims priority of application No. 2020-149166 (JP), filed on Sep. 4, 2020.
Prior Publication US 2023/0347453 A1, Nov. 2, 2023
Int. Cl. B23K 35/00 (2006.01); B23K 1/00 (2006.01); B23K 35/26 (2006.01); C22C 12/00 (2006.01); C22C 28/00 (2006.01); H05K 3/34 (2006.01); B23K 101/40 (2006.01)

CPC B23K 35/264 (2013.01) [B23K 1/0016 (2013.01); C22C 12/00 (2013.01); C22C 28/00 (2013.01); H05K 3/3457 (2013.01); B23K 2101/40 (2018.08)]

9 Claims

1. A low melting-point bonding member for mounting a semiconductor electronic circuit, comprising

a plating layer formed of a low melting-point alloy, wherein the low melting-point alloy is made up of Bi, In, Sn, and inevitably-contained impurities, wherein

the low melting-point alloy contains Bi: 63 mass % or more and 72 mass % or less, In: 26 mass % or more and 36.9 mass % or less, and Sn: 0.1 mass % or more and 2 mass % or less when a total amount of Bi, In, and Sn in the low melting-point alloy is 100 mass % and has a melting point of 106 to 111° C., and

the low melting-point alloy is disposed on a film formed of one or more kinds of undermetal selected from the group consisting of Ti, Ni, Cu, Au, Sn, Ag, Cr, Pd, Pt, W, Co, TiW, NiP, NiB, NiCo, and NiV.