US 12,285,819 B2
Method for cutting substrate wafer from indium phosphide crystal bar
Yanlei Shi, Hebei (CN); Niefeng Sun, Hebei (CN); Shujie Wang, Hebei (CN); Hongfei Zhao, Hebei (CN); Yaqi Li, Hebei (CN); Lijie Fu, Hebei (CN); Yang Wang, Hebei (CN); Xiaolan Li, Hebei (CN); Huimin Shao, Hebei (CN); Huisheng Liu, Hebei (CN); and Jian Jiang, Hebei (CN)
Assigned to THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION, Shijiazhuang (CN)
Appl. No. 17/415,928
Filed by THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION, Hebei (CN)
PCT Filed Sep. 10, 2020, PCT No. PCT/CN2020/114329
§ 371(c)(1), (2) Date Jun. 18, 2021,
PCT Pub. No. WO2021/088509, PCT Pub. Date May 14, 2021.
Claims priority of application No. 201911070369.9 (CN), filed on Nov. 5, 2019.
Prior Publication US 2022/0072660 A1, Mar. 10, 2022
Int. Cl. B23K 26/362 (2014.01); B23K 26/402 (2014.01); B23K 37/04 (2006.01); B28D 5/00 (2006.01); B28D 5/04 (2006.01); H01L 21/02 (2006.01)
CPC B23K 26/362 (2013.01) [B23K 26/402 (2013.01); B23K 37/0408 (2013.01); B28D 5/0082 (2013.01); B28D 5/045 (2013.01); H01L 21/02035 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for cutting a substrate crystal wafer from an indium phosphide crystal characterized by comprising following steps of:
1) orientating: cutting a head and a tail of a crystal bar, adjusting the orientation and cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face;
2) multi-wire cutting: on a multi-wire cutting apparatus, dividing the crystal bar parallel to an orientation end face into wafers;
3) cleaning: cleaning the wafer until no residue or dirt exists on the surface;
4) circle cutting: performing circle cutting on the wafer to cut an area having a same crystal orientation.