US 12,285,233 B2
Non-fiber flat-panel breast diffusion optical tomography system
Shouping Zhu, Xi'an (CN); Xu Cao, Xi'an (CN); Yihan Wang, Xi'an (CN); Xueli Chen, Xi'an (CN); Fanzhen Meng, Xi'an (CN); Duofang Chen, Xi'an (CN); and Jing Zhao, Xi'an (CN)
Assigned to XIDIAN UNIVERSITY, Xi'an (CN)
Filed by Xidian University, Xi'an (CN)
Filed on Oct. 26, 2021, as Appl. No. 17/511,089.
Application 17/511,089 is a continuation of application No. PCT/CN2020/138604, filed on Dec. 23, 2020.
Claims priority of application No. 202010032176.0 (CN), filed on Jan. 13, 2020; application No. 202010171553.9 (CN), filed on Mar. 12, 2020; and application No. 202010261131.0 (CN), filed on Apr. 3, 2020.
Prior Publication US 2022/0047161 A1, Feb. 17, 2022
Int. Cl. A61B 5/00 (2006.01)
CPC A61B 5/0013 (2013.01) [A61B 5/0066 (2013.01); A61B 5/0073 (2013.01); A61B 5/0086 (2013.01); A61B 5/0091 (2013.01); A61B 5/708 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A breast diffusion optical tomography device comprising: a light source, a detector and an acquisitor;
wherein the light source and the detector are movable along a predetermined direction;
wherein the light source comprises a continuous-wave mode light source and a frequency-domain mode light source, the detector comprises a continuous-wave mode detector and a frequency-domain mode detector, and the acquisitor comprises a continuous-wave mode acquisitor and a frequency-domain mode acquisitor;
wherein the continuous-wave mode light source comprises M1 number of multi-wavelength light emitters for a continuous-wave mode, and the frequency-domain mode light source comprises M2 number of laser diodes of different wavelengths for a frequency-domain mode, and M2 is less than M1; the continuous-wave mode detector comprises N1 number of silicon photomultipliers for a detection in the continuous-wave mode, and the frequency-domain mode detector comprises N2 number of silicon photomultipliers for a detection in the frequency-domain mode; and the N2 number of silicon photomultipliers are some of the N1 number of silicon photomultipliers, and N2 is less than N1; and
wherein an arrangement of the Ml number of multi-wavelength light emitters, an arrangement of the M2 number of laser diodes, an arrangement of the N1 number of silicon photomultipliers and an arrangement of the N2 number of silicon photomultipliers each are a uniform spacing arrangement, the N1 number of silicon photomultipliers are connected to the continuous-wave mode acquisitor, and the N2 number of silicon photomultipliers are connected to the frequency-domain mode acquisitor;
wherein the M1 number of multi-wavelength light emitters comprise m1 rows and n1 columns of multi-wavelength light emitters for the continuous-wave mode, and the M2 number of laser diodes comprise m2 rows and n2 columns of laser diodes of different wavelengths for the frequency-domain mode, m2 is less than ml, and n2 is less than n1; each row of the m2 rows of laser diodes is arranged between adjacent two rows of the m1 rows of multi-wavelength light emitters; the N1 number of silicon photomultipliers comprise m1 rows and n1 columns of silicon photomultipliers; the m1 rows and n1 columns of silicon photomultipliers and the m1 rows and n1 columns of multi-wavelength light emitters are opposite to each other and are arranged in a one-to-one correspondence manner, N2, m1, n1, m2 and n2 each are an integer greater than 1.