US RE50,396 E1
Displays with silicon and semiconducting-oxide top-gate thin-film transistors
Shinya Ono, Santa Clara, CA (US); Chin-Wei Lin, San Jose, CA (US); Ching-Sang Chuang, Sunnyvale, CA (US); Jiun-Jye Chang, Cupertino, CA (US); Keisuke Omoto, Kitanagoya (JP); Shang-Chih Lin, Cupertino, CA (US); Ting-Kuo Chang, San Jose, CA (US); and Takahide Ishii, Taoyuan (TW)
Assigned to Apple Inc., Cupertino, CA (US)
Filed by Apple Inc., Cupertino, CA (US)
Filed on Jun. 30, 2022, as Appl. No. 17/855,551.
Application 17/855,551 is a division of application No. 16/845,526, filed on Apr. 10, 2020, granted, now RE49166.
Application 17/855,551 is a reissue of application No. 15/729,330, filed on Oct. 10, 2017, granted, now 10,249,695, issued on Apr. 2, 2019.
Claims priority of provisional application 62/476,551, filed on Mar. 24, 2017.
Int. Cl. H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10K 59/121 (2023.01); H10K 59/123 (2023.01); H10K 59/124 (2023.01); H10K 59/131 (2023.01)
CPC H01L 27/1222 (2013.01) [H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1255 (2013.01); H01L 29/7869 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/123 (2023.02); H10K 59/124 (2023.02); H10K 59/131 (2023.02); H01L 29/78675 (2013.01)] 19 Claims
OG exemplary drawing
 
[ 19. A display, comprising:
a semiconducting-oxide transistor;
a storage capacitor coupled to the semiconducting-oxide transistor;
a silicon switching transistor coupled to the semiconducting-oxide transistor, wherein the silicon switching transistor is formed on a substrate, wherein the semiconducting-oxide transistor is formed above the silicon switching transistor, wherein the silicon switching transistor has a gate conductor formed in a gate layer, and wherein the storage capacitor has a terminal formed in the gate layer;
an organic layer formed over the semiconducting-oxide transistor; and
a metal layer laterally coupling a source-drain terminal of the semiconducting-oxide transistor to a source-drain terminal of the silicon switching transistor, wherein the metal layer is not formed through the organic layer.]